MMBT3904SL — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
T
J
=125 C
T
J
=75 C
T
J
=25 C
o
o
o
Figure 2. Collector-Emitter Saturation Voltage
1000
Vce=1V
Ic=10*Ib
Collector-Emitter Voltage,[mV]
Current Gain
100
T
J
=-25 C
o
T
J
=125 C
T
J
=75 C
o
o
100
o
T
J
=25 C
T
J
=-25 C
o
10
1
10
100
1000
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Ic=10*Ib
T
J
=25 C
1000
o
Figure 4. Collector- Base Leakage Current
T
J
=-25 C
o
Base-Collector Leakage Current,[nA]
1000
Base- Emitter Voltage,[mV]
T
J
=125 C
o
T
J
=75 C
T
J
=125 C
o
o
100
T
J
=75 C
T
J
=25 C
o
o
10
T
J
=-25 C
1
10
o
100
10
100
20
30
40
50
60
Collector Current, [mA]
Base-Collector Revere Voltage, [V]
Figure 5. Collector- Base Capacitance
Base- Collector Juntion Capacitance, C
ob
[pF]
7
Figure 6. Power Derating
300
f=1mhz
7
250
Power Dissipation, [mW]
6
200
6
150
5
100
5
50
4
0
5
10
0
0
25
50
75
100
o
125
150
Base- Collector Reverse Voltage, V
cb
[V]
Ambient Temperature, T
a
[ C]
© 2007 Fairchild Semiconductor Corporation
MMBT3904SL Rev. 1.0.0
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
