J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
G
S
G
S
TO-92
D
SOT-23
Mark: 6P / 6R / 6S
D
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
35
- 35
50
-55 to +150
Units
V
V
mA
°C
5
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J111-113
625
5.0
125
357
Max
*MMBFJ111-113
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
J111/112/113/MMBFJ111/112/113, Rev A