MJE13004/13005
MJE13004/13005
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: MJE13004
: MJE13005
V
CEO
Collector-Emitter Voltage
: MJE13004
: MJE13005
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
300
400
9
4
8
2
75
150
- 65 ~ 150
600
700
Parameter
Value
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: MJE13004
: MJE13005
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
I
C
= 4A, I
B
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
= 125V, I
C
= 2A
I
B1
= - I
B2
= 0.4A
R
L
= 62.5Ω
4
0.8
4
0.9
65
10
8
Min.
300
400
1
60
40
0.5
0.6
1
1.2
1.6
V
V
V
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
mA
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
