MBR4035PT-MBR4060PT
MBR4035PT - MBR4060PT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
+
PIN 3
CASE
PIN 2
1
2
3
TO-3P/TO-247AD
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
4035PT
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 125°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
45
Value
4045PT
4050PT
50
40
400
-65 to +175
-65 to +150
4060PT
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJL
Power Dissipation
Thermal Resistance, Junction to Lead
Parameter
Value
3.0
1.2
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
T
A
= 25°C unless otherwise noted
Parameter
4035PT
Forward Voltage I
F =
20 A, T
C
= 25°C
I
F =
20 A, T
C
= 125°C
I
F =
40 A, T
C
= 25°C
I
F =
40 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
0.70
0.60
0.80
0.75
Device
4045PT
4050PT
4060PT
0.72
0.62
-
-
1.0
100
2.0
1.0
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR4035PT - MBR4060PT, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
