MBR3035PT - MBR3060PT
MBR3035PT - MBR3060PT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
+
PIN 3
CASE
PIN 2
1
2
3
TO-3P/TO-247AD
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
3035PT
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
Value
3045PT
45
30
200
-65 to +175
-65 to +150
3050PT
50
3060PT
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Lead
Value
3.0
1.4
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
T
A
= 25°C unless otherwise noted
Parameter
3035PT
Forward Voltage I
F =
20 A, T
C
= 25°C
I
F =
20 A, T
C
= 125°C
I
F =
30 A, T
C
= 25°C
I
F =
30 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz
-
0.60
0.76
0.72
1.0
60
1.0
Device
3045PT
3050PT
3060PT
0.75
0.65
-
-
5.0
100
0.5
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
