MBR20200CT — Dual High Voltage Schotty Rectifier
Typical Performance Characteristics
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
1000
10
100
Forward Current, I
F
[A]
Reverse Current, I
R
[uA]
T
J
=125 C
10
o
1
T
J
=125 C
T
J
=75 C
o
o
1
T
J
=75 C
0.1
o
0.1
T
J
=25 C
o
0.01
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1E-3
50
T
J
=25 C
100
150
200
o
Forward Voltage Drop, V
F
[V]
Reverse Voltage, V
R
[V]
Figure 3.Junction Capacitance
1
0.9
0.8
0.7
Figure 4. Power Derating
30
f=1mhz
[A]
Juntion Capacitance, C
J
[nF]
F(AV)
25
0.6
0.5
0.4
0.3
DC
20
Average Forward Current, I
15
10
0.2
5
0.1
0
2
4
6
8
10
0
0
25
50
75
100
o
125
150
Reverse Voltage, V
R
[V]
Case Temperature, T
C
[ C]
© 2008 Fairchild Semiconductor Corporation
MBR20200CT Rev. 1.0.0
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
