MBR20100CT — Dual High Voltage Schottky Rectifier
October 2010
MBR20100CT
Dual High Voltage Schottky Rectifier
Features
•
•
•
•
•
•
Low Forward Voltage Drop
Low Power Loss and High Efficiency
High Surge Capability
Rohs Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
+
PIN1
PIN3
_
PIN2
TO-220
1
Mark : MBR20100CT
Absolute Maximum Ratings*
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, T
c
= 120°C
Peak Forward Surge Current, 8.3mS Half Sine wave
Storage Temperature Range
Value
100
100
10 (Per Leg)
20 (Per Device)
150
-55 to 150
Unit
V
V
A
A
°C
Operating Junction Temperature
150
°C
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
R
θJ
C
R
θJ
A
* JESD51-10
T
a
= 25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
Max.
1.5
62.5
Unit
°C/W
°C/W
Electrical Characteristics*
Symbol
I
R
T
a
= 25°C unless otherwise noted
Parameter
Reverse Current
Test Condition
V
R
= 100V
V
R
= 100V
I
F
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
T
c
= 25
°C
T
c
= 125
°C
T
c
= 25
°C
T
c
= 125
°C
T
c
= 25
°C
T
c
= 125
°C
Min.
Max.
0.2
5
0.8
0.7
0.9
0.8
Unit
mA
V
F
Forward Voltage
V
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
© 2010 Fairchild Semiconductor Corporation
MBR20100CT Rev. A0
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
