MBR1035-MBR1060
MBR1035 - MBR1060
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1 +
+
PIN 2 -
CASE Positive
CASE
1
2
TO-220AC
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
1035
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
Value
1045
45
10
150
-65 to +175
-65 to +150
1050
50
1060
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Parameter
Value
2.0
60
2.0
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
Forward Voltage
T
A
= 25°C unless otherwise noted
Parameter
1035
I
F =
10 A, T
C
= 25°C
I
F =
10 A, T
C
= 125°C
I
F =
20 A, T
C
= 25°C
I
F =
20 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
-
0.57
0.84
0.72
Device
1045
1050
0.80
0.70
0.95
0.85
0.1
15
1.0
0.5
1060
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR1035 - MBR1060, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
