KSC5021 — NPN Silicon Transistor
Typical Characteristics
5
1000
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
4
I
B
= 1.2A
3
h
FE
, DC CURRENT GAIN
I
B
= 1A
100
I
B
= 200mA
2
I
B
= 100mA
I
B
= 50mA
10
1
I
B
= 20mA
0
I
B
= 0
0
2
4
6
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
6
I
C
= 5 I
B
5
V
CE
= 5V
1
V
BE
(sat)
I
C
[A], COLLECTOR CURRENT
4
3
0.1
2
V
CE
(sat)
1
0.01
0.01
0.1
1
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
t
STG
I
C
[A], COLLECTOR CURRENT
t
ON
, t
STG
, t
F
[
m
s], TIME
10
I
CP
(max)
I
C
(max)
50
m
s
m
10
s
1m
0
50
1
m
s
s
DC
1
t
ON
0.1
t
F
0.1
0.01
0.1
0.01
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
4
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
