KA1M0565R/KA1H0565R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain source breakdown voltage
Symbol
BV
DSS
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=2.5A
V
DS
=50V, I
D
=2.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=5.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=5.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.76
-
1457
130
38.8
-
-
-
-
-
10.3
22.3
Max.
-
50
200
2.2
-
-
-
-
60
150
300
130
56
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
Zero gate voltage drain current
Static drain source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
Note:
Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
1
S
= ---
-
R
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
Qg
Qgs
Qgd
S
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
