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IRFP150 参数 Datasheet PDF下载

IRFP150图片预览
型号: IRFP150
PDF下载: 下载PDF文件 查看货源
内容描述: 先进的功率MOSFET [Advanced Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 262 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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IRFP150A
Ο
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
C
unless otherwise specified)
Symbol
BV
DSS
BV/
T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
100
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.11
--
--
--
--
--
--
28.34
420
185
17
20
80
45
75
13.2
34.8
--
--
4.0
100
-100
10
100
0.04
--
485
215
50
50
160
100
97
--
--
nC
ns
µ
A
pF
V
V/
C
V
nA
Ο
Test Condition
V
GS
=0V,I
D
=250
µ
A
I
D
=250
µ
A
See Fig 7
V
DS
=5V,I
D
=250
µ
A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
C
V
GS
=10V,I
D
=21.5A
V
DS
=40V,I
D
=21.5A
4
O
4
O
Ο
1750 2270
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=50V,I
D
=40A,
R
G
=6.2
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=40A
See Fig 6 & Fig 12
4
5
OO
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
135
0.65
43
170
1.6
--
--
A
V
ns
µ
C
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25
C
,I
S
=43A,V
GS
=0V
T
J
=25
C
,I
F
=40A
di
F
/dt=100A/
µ
s
4
O
Ο
Ο
Notes ;
1
O
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2
O
L=0.6mH, I
AS
=43A, V
DD
=25V, R
G
=27
, Starting T
J
=25
oo
C
3
_
_
_
O
I
SD
<
40A, di/dt
<
470A/
µ
s, V
DD
<
BV
DSS
, Starting T
J
=25 C
_
s,
4
Pulse Test : Pulse Width = 250
µ
Duty Cycle
<
2%
O
5
O
Essentially Independent of Operating Temperature