IRF740B/IRFS740B
November 2001
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
•
•
•
•
•
•
10A, 400V, R
DS(on)
= 0.54Ω @V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRF740B
400
10
6.3
40
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS740B
10 *
6.3 *
40 *
450
10
13.4
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
134
1.08
-55 to +150
300
44
0.35
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
IRF740B
0.93
0.5
62.5
IRFS740B
2.86
--
62.5
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
