IRF730
Data Sheet
January 2002
5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17414.
Features
• 5.5A, 400V
• r
DS(ON)
= 1.000
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRF730
PACKAGE
TO-220AB
BRAND
IRF730
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF730 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
