Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
0.9
1. VGS = 0 V
※
Notes :
2. ID = 250 μA
1. VGS = 10 V
2. ID = 9.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
2
10
102
100 µs
100 µs
1 ms
1
10
1 ms
10 ms
10 ms
100 ms
101
100
DC
DC
0
10
※
Notes :
※
Notes :
1. TC = 25 oC
-1
10
1. TC = 25 oC
2. T = 150 oC
3. Single Pulse
2. T = 150 oC
3. Single Pulse
J
J
-1
10
-2
0
10
101
102
10
100
1
10
2
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF640B
Figure 9-2. Maximum Safe Operating Area
for IRFS640B
20
16
12
8
4
0
25
50
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
