Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 0.144
Ω
(Typ.)
1
2
3
IRF640A
BV
DSS
= 200 V
R
DS(on)
= 0.18
Ω
I
D
= 18 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
2
O
1
O
1
O
3
O
o
Value
200
18
11.4
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
o
72
+ 30
_
216
18
13.9
5.0
139
1.11
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.9
--
62.5
o
Units
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
