$GYDQFHG 3RZHU 026)(7
FEATURES
♦
Avalanche Rugged Technology
♦
Rugged Gate Oxide Technology
♦
Lower Input Capacitance
♦
Improved Gate Charge
♦
Extended Safe Operating Area
♦
Lower Leakage Current: 10µA (Max.) @ V
DS
= 250V
♦
Lower R
DS(ON)
: 0.327Ω (Typ.)
1
2
3
IRF634A
BV
DSS
= 250 V
R
DS(on)
= 0.45Ω
I
D
= 8.1 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
250
8.1
5.1
32
±30
205
8.1
7.4
4.8
74
0.59
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.69
--
62.5
°C/W
Units
Rev. B
©1999 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
