IRF630B/IRFS630B
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
10
2
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
I
D
, Drain Current [A]
100
µ
s
10
1
10
1
100
µ
s
1 ms
10 ms
100 ms
1 ms
10 ms
DC
10
0
DC
10
0
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
o
10
-1
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
o
10
-1
10
0
-2
10
10
1
10
2
10
0
10
1
10
2
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for IRF630B
Figure 9-2. Maximum Safe Operating Area
for IRFS630B
10
8
I
D
, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
