Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= 200V
Low R
DS(ON)
: 0.333
Ω
(Typ.)
1
2
3
IRF630A
BV
DSS
= 200 V
R
DS(on)
= 0.4
Ω
I
D
= 9 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C )
Continuous Drain Current (T
C
=100 C )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
2
O
1
O
1
O
3
O
o
o
Value
200
9
5.7
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
36
+ 30
_
162
9
7.2
5.0
72
0.57
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
R
θ
JC
θ
CS
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.74
--
62.5
Units
o
C /W
R
θ
JA
Rev. B
©1999 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
