HUFA76429D3
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
1.2
I
D
= 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
0.9
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
V
DD
= 30V
8
C, CAPACITANCE (pF)
1000
6
C
OSS
≅
C
DS
+ C
GD
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 20A
I
D
= 10A
100
C
RSS
=
C
GD
30
0.1
1.0
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
0
0
5
10
15
25
20
Q
g
, GATE CHARGE (nC)
30
35
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
400
V
GS
= 4.5V, V
DD
= 30V, I
D
= 20A
300
V
GS
= 10V, V
DD
= 30V, I
D
= 20A
250
SWITCHING TIME (ns)
SWITCHING TIME (ns)
300
t
r
200
t
f
100
t
d(ON)
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
t
d(OFF)
200
t
d(OFF)
150
100
t
r
50
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
t
d(ON)
t
f
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
HUFA76429D3 Rev. C1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
