HUFA75307T3ST
Data Sheet
December 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET
Features
• 2.6A, 55V
• Ultra Low On-Resistance, r
This N-Channel power MOSFET is
manufactured using the innovative
= 0.090Ω
DS(ON)
• Diode Exhibits Both High Speed and Soft Recovery
UltraFET® process. This advanced
®
process technology achieves the
• Temperature Compensating PSPICE Model
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Formerly developmental type TA75307.
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
G
HUFA75307T3ST
SOT-223
5307
S
NOTE: HUFA75307T3ST is available only in tape and reel.
Packaging
SOT-223
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
