HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1
H11G2
H11G3
FEATURES
• High BV
CEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at I
F
= 1 mA
• Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
•
•
•
•
•
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
NOTE
All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
EMITTER
Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
H11G1
H11G2
H11G3
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
V
ISO
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
5300
60
6.0
3.0
100
1.8
Units
°C
°C
°C
mW
mW/°C
Vac(rms)
mA
V
A
mW
mW/°C
V
CEO
P
D
100
80
55
200
2.67
V
mW
mW/°C
7/21/00
200045A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
