HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS
(Cont.)
Parameter
DETECTOR
*Power Dissipation @ T
A
= 25°C
Derate linearly above 25°C
H11D1 - H11D2
*Collector to Emitter Voltage
H11D3 - H11D4
4N38
H11D1 - H11D2
*Collector Base Voltage
H11D3 - H11D4
4N38
*Emitter to Collector Voltage
Collector Current (Continuous)
H11D1 - H11D2
H11D3 - H11D4
V
ECO
V
CBO
V
CER
P
D
Symbol
Value
300
4.0
300
200
80
300
200
80
7
100
mA
V
Units
mW
mW/°C
ELECTRICAL CHARACTERISTICS
Characteristic
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
*Collector to Base
Emitter to Base
Emitter to Collector
*Leakage Current
Collector to Emitter
(R
BE
= 1 M")
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions
(I
F
= 10 mA)
Symbol
V
F
!V
F
!T
A
BV
R
C
J
I
R
BV
CER
BV
CEO
BV
CBO
BV
EBO
BV
ECO
Device
ALL
ALL
ALL
ALL
ALL
ALL
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
H11D1/2
I
CER
H11D3/4
I
CEO
4N38
6
Min
Typ**
1.15
-1.8
25
50
65
0.05
Max
1.5
Unit
V
mV/°C
V
pF
pF
µA
(I
R
= 10 µA)
(V
F
= 0 V, f = 1 MHz)
(V
F
= 1 V, f = 1 MHz)
(V
R
= 6 V)
(R
BE
= 1 M")
(I
C
= 1.0 mA, I
F
= 0)
(No R
BE
) (I
C
= 1.0 mA)
(I
C
= 100 µA, I
F
= 0)
10
(I
E
= 100 µA , I
F
= 0)
(V
CE
= 200 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 200 V, I
F
= 0, T
A
= 100°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 25°C)
(V
CE
= 100 V, I
F
= 0, T
A
= 100°C)
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25°C)
300
200
80
300
200
80
7
7
V
10
100
250
100
250
50
nA
µA
nA
µA
nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
8/9/00
200046A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
