H11AA1, H11AA3, H11AA2, H11AA4 AC Input/Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
Test Conditions
EMITTER
Input Forward Voltage
Capacitance
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I
C
= 1.0 mA, I
F
= 0
I
C
= 100 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 0, f = 1 MHz
V
CE
= 0, f = 1 MHz
V
CE
= 0, f = 1 MHz
BV
CEO
BV
CBO
BV
EBO
BV
ECO
I
CEO
C
CE
C
CB
C
EB
All
All
All
All
H11AA1,3,4
H11AA2
All
All
All
10
80
15
30
70
5
7
50
200
pF
pF
pF
V
V
V
V
nA
I
F
= ±10 mA
V
F
= 0 V, f = 1.0 MHz
V
F
C
J
All
All
1.2
80
1.5
V
pF
Symbol
Device
Min
Typ
Max
Unit
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Characteristics
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= ±10 mA, V
CE
= 10 V
Symbol Device
CTR
CE
H11AA4
H11AA3
H11AA1
H11AA2
Min
100
50
20
10
.33
Typ
Max
Units
%
Current Transfer Ratio, Symmetry
Saturation Voltage
Collector to Emitter
I
F
= ±10 mA, V
CE
= 10 V (Figure.8)
I
F
= ±10 mA, I
CE
= 0.5 mA
V
CE(SAT)
All
All
3.0
.40
V
Isolation Characteristics
Characteristic
Package Capacitance input/output
Isolation Voltage
Isolation Resistance
Test Conditions
V
I-O
= 0, f = 1 MHz
f = 60 Hz, t = 1 min.
V
I-O
= 500 VDC
Symbol
C
I-O
V
ISO
R
ISO
Min
5300
1011
Typ
0.7
Max
Units
pF
VAC(RMS)
Ω
2
H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
