FSCQ-SERIES
Electrical Characteristics (SenseFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
V
V
V
V
= 0V, I = 250μA 650
-
-
-
V
μA
Ω
DSS
GS
DS
GS
GS
GS
GS
GS
GS
GS
D
I
= 650V,V
= 0V
= 10V, I = 1A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
DSS
GS
FSCQ0565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1465RT
FSCQ1565RT
FSCQ1565RP
FSCQ0565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1465RT
FSCQ1565RT
FSCQ1565RP
FSCQ0565RT
FSCQ0765RT
FSCQ0965RT
FSCQ1265RT
FSCQ1465RT
FSCQ1565RT
FSCQ1565RP
1.76 2.2
D
= 10V, I = 1A
1.4
1.0
1.6
1.2
Ω
D
= 10V, I = 1A
Ω
D
Drain-Source ON-State
Resistance
R
= 10V, I = 1A
0.75 0.9
0.7 0.8
Ω
DS(ON)
D
= 10V, I = 1A
Ω
D
= 10V, I = 1A
0.53 0.7
0.53 0.7
Ω
D
= 10V, I = 1A
Ω
D
1080
1415
1750
2400
2400
3050
3050
90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
= 0V, V = 25V,
GS DS
f = 1MHz
Input Capacitance
C
pF
ISS
100
130
V
= 0V, V = 25V,
GS DS
f = 1MHz
Output Capacitance
C
175
pF
OSS
185
220
220
6
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
