FQPF8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
3.0
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
0.9
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.13 A
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
킕
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
10ms
6
10
1
I
D
, Drain Current [A]
10
0
100ms
DC
I
D
, Drain Current [A]
10
3
1ms
4
10
-1
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
2
10
-2
10
0
10
1
10
2
0
25
50
75
100
o
125
150
V
DS
, Drain-SourceVoltage[V]
T
C
, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
D=0.5
0.2
0.1
0.05
Z
? JC
Thermal Response
(t),
10
-1
P
DM
t
1
t
2
0.02
0.01
single pulse
10
-2
* Notes :
1. Z
? JC
= 2.6 ? /W Max.
(t)
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
? JC
(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
FQPF8N60CF Rev. A
4
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