Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
Bottom : 5.5 V
℃
150
100
100
℃
25
℃
-55
※
Notes :
※
Notes :
μ
1. VDS = 50V
1. 250 s Pulse Test
μ
℃
2. TC = 25
2. 250 s Pulse Test
-1
-1
10
10
-1
100
101
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
101
100
10-1
VGS = 10V
VGS = 20V
℃
150
℃
25
※
Notes :
1. VGS = 0V
μ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 50V
800
600
400
200
0
C
VDS = 125V
VDS = 200V
C
iss
Coss
6
※
Notes :
4
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 8.0 A
0
-1
100
101
0
3
6
9
12
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, May 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
