FQP5N60C/FQPF5N60C
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
-55 C
10
0
o
o
25 C
o
10
-1
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
-2
10
-1
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
10
5
1
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
4
V
GS
= 10V
3
I
DR
, Reverse Drain Current [A]
10
0
2
V
GS
= 20V
1
※
Note : T
J
= 25℃
150℃
25℃
10
-1
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
800
10
V
DS
= 120V
V
DS
= 300V
C
iss
V
GS
, Gate-Source Voltage [V]
8
V
DS
= 480V
Capacitance [pF]
600
C
oss
400
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
200
C
rss
2
※
Note : I
D
= 4.5A
0
-1
10
0
10
0
10
1
0
4
8
12
16
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
