Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes :
0.9
0.8
1. VGS = 0 V
※
Notes :
μ
2. ID = 250
A
1. VGS = 10 V
2. ID = 2.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
102
Operation in This Area
is Limited by R DS(on)
10 µs
Operation in This Area
is Limited by R DS(on)
101
100
10-1
10-2
100 µs
100 µs
1 ms
10 ms
100 ms
101
100
1 ms
10 ms
100 ms
DC
DC
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
10-1
C
C
C
C
10-2
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP4N90C
Figure 9-2. Maximum Safe Operating Area
for FQPF4N90C
5
4
3
2
1
0
25
50
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
