FQP12N60C/FQPF12N60C
Typical Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
o
o
25 C
10
0
o
-55 C
10
0
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
10
10
0
-1
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
V
GS
= 10V
1.0
I
DR
, Reverse Drain Current [A]
10
1
10
0
150℃
25℃
-1
0.5
V
GS
= 20V
※
Note : T
J
= 25
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0
5
10
15
20
25
30
35
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
3000
V
DS
= 120V
10
V
DS
= 300V
V
DS
= 480V
2500
C
iss
C
oss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
2000
6
1500
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
4
1000
C
rss
500
2
※
Note : I
D
= 12A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
