FQP50N06
Typical Characteristics
(Continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.5
1.0
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 25 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
3
60
Operation in This Area
is Limited by R
DS(on)
50
I
D
, Drain Current [A]
1 ms
10 ms
DC
10
1
I
D
, Drain Current [A]
2
10
2
100μ s
40
30
20
※
Notes :
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
o
10
10
-1
10
0
10
0
10
1
10
0
25
50
75
100
125
150
175
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5
0 .2
0 .1
10
-1
※
N otes :
1 . Z
θ
J C
( t ) = 1 . 2 4
℃
/W M a x .
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
-2
P
DM
t
1
t
2
Z
10
θ
JC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
