FQA8N80 800V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
Figure 2. Transfer Characteristics
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
o
10
0
10
0
25 C
-55 C
※
Notes :
1. V
DS
= 50V
2. 250µ s Pulse Test
o
o
10
-1
※
Notes :
1. 250µs Pulse Test
2. T
C
= 25
℃
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.0
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
2.5
V
GS
= 10V
10
1
2.0
V
GS
= 20V
1.5
10
0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
1.0
※
Note : T
J
= 25
℃
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3500
3000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
V
DS
= 160V
10
C
iss
V
GS
, Gate-Source Voltage [V]
V
DS
= 400V
V
DS
= 640V
Capacitance [pF]
8
2000
C
oss
1500
1000
500
0
-1
10
6
4
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 8.4 A
0
10
0
10
1
0
10
20
30
40
50
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQA8N80 Rev. A1
3
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
