FQA11N90C_F109 900V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
Figure 2. Transfer Characteristics
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
-55 C
o
o
10
0
25 C
10
0
o
10
-1
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
-1
0
1
10
-1
※
Notes :
1. V
DS
= 50V
2. 250µ s Pulse Test
10
10
10
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.5
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
2.0
V
GS
= 10V
V
GS
= 20V
10
1
1.5
10
0
1.0
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
※
Note : T
J
= 25
℃
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
4500
4000
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
C
iss
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 180V
V
DS
= 450V
V
DS
= 720V
Capacitance [pF]
3000
2500
8
C
oss
2000
1500
1000
500
0
-1
10
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
4
C
rss
2
※
Note : I
D
= 11A
0
10
0
10
1
0
10
20
30
40
50
60
70
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQA11N90C_F109 Rev. A
3
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