FJD5304D High Voltage Fast Switching Transistor
FJD5304D
High Voltage Fast Switching Transistor
Features
•
•
•
•
Built-in Free Wheeling Diode
Wide Safe Operating Area
Small Variance in Storage Time
Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
1
D-PACK
E
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
T
C
= 25°C unless otherwise noted
Parameter
Value
700
400
12
4
8
2
4
30
150
-55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
J5304D
J5304D
Device
FJD5304DTM
FJD5304DTF
Package
D-PAK
D-PAK
Reel Size
13” Dia
13” Dia
Tape Width
-
-
Quantity
2500
2000
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJD5304D Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
