FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics
Figure 1. Static Characterstic
4.0
3.5
100
Figure 2. DC Current Gain
I
B
=300mA
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
T
C
=125 C
o
3.0
I
B
=150mA
2.5
2.0
1.5
1.0
0.5
0.0
I
B
=100mA
I
B
=50mA
T
C
= - 25 C
10
o
T
C
=25 C
o
0
2
4
6
8
10
12
1
0.01
0.1
1
10
V
CE
[V]. COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter Saturation Voltage
10
V
CE
(sat) [V], SATURATION VOLTAGE
T
C
=125 C
o
1
T
C
=25 C
T
C
= - 25 C
0.1
o
o
V
BE
(sat) [V], SATURATION VOLTAGE
I
C
= 5 I
B
I
C
= 5 I
B
1
T
C
= - 25 C
o
o
T
C
=125 C
o
T
C
=25 C
0.01
0.01
0.1
1
10
0.1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
10
Figure 6. Forward Biased Safe Operating Area
100
t
STG
& t
F
[
µ
s], SWITCHING TIME
I
C
[A], COLLECTOR CURRENT
t
STG
1
10
Pulse I
C_MAX
DC I
C_MAX
10
µ
s
1
µ
s
1
t
F
0.1
1ms
0.1
V
CC
=250V
I
C
= 5 I
B1
= - 5 I
B2
0.01
0.1
1
10
T
C
= 25 C
Single Pulse
0.01
1
10
100
1000
o
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
FJD5304D Rev. A
3
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