Typical Characteristics:
5
1600
1200
800
400
0
f = 1 MHz
VGS = 0 V
ID = -5A
VDS = -4V
-8V
4
3
2
1
0
Ciss
-6V
Coss
Crss
0
2
4
6
8
10
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
SINGLE PULSE
RqJA = 135°C/W
TA = 25°C
100ms
RDS(ON) LIMIT
40
30
20
10
0
1ms
10ms
10
1
100ms
1s
10s
DC
VGS = -4.5V
SINGLE PULSE
0.1
R
qJA = 135oC/W
T
A = 25oC
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) * RqJA
0.2
R
qJA = 135oC/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9933 Rev C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
