FDS9933
September 2006
FDS9933
Dual P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Features
•
–5 A, –20 V,
R
DS(ON)
= 55 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 90 mΩ @ V
GS
= –2.5 V
•
Extended V
GSS
range (±12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
•
•
•
Load switch
Motor drive
DC/DC conversion
Power management
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G2
S
S2
S
S
G1
S1
G
8
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–20
±12
(Note 1a)
Units
V
V
A
W
–5
–30
2
1.6
1
0.9
–55 to +175
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
9933
©2006
Fairchild Semiconductor International
Device
FDS9933
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS9933 Rev C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
