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FDS9933A 参数 Datasheet PDF下载

FDS9933A图片预览
型号: FDS9933A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道2.5V指定的PowerTrench MOSFET [Dual N-Channel 2.5V Specified PowerTrench MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
文件页数/大小: 8 页 / 193 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS9933A
November 1998
FDS9933A
Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
-3.8 A, -20 V. R
DS(on)
= 0.075
Low gate charge ( 7nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
@ V
GS
= -4.5 V
R
DS(on)
= 0.105
@ V
GS
= -2.5 V.
Applications
Load switch
DC/DC converter
Motor drives
High power and current handling capability.
D2
D1
D1
G2
D2
5
6
7
8
4
3
2
1
SO-8
pin
1
S1
G1
S2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
FDS9933A
-20
(Note 1a)
Units
V
V
A
W
±
8
-3.8
-20
2.0
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
-55 to +150
°
C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDS9933A
Device
FDS9933A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©1998
Fairchild Semiconductor Corporation
FDS9933A Rev. C