FDS9926A
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3A
4
CAPACITANCE (pF)
15V
3
V
DS
= 5V
10V
1000
f = 1MHz
V
GS
= 0 V
800
C
ISS
600
2
400
1
200
C
OSS
C
RSS
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
50
100µs
1ms
10ms
100ms
1s
10s
V
GS
= 10V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
1
30
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 135°C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9926A Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
