FDS9431A
Typical Characteristics
10
V
GS
= -4.5V
-I
D
, DRAIN CURRENT (A)
8
-3.5V
R
DS(ON)
, NORMALIZED
-2.5V
DRAIN-SOURCE ON-RESISTANCE
2
1.8
V
GS
= -2.0V
1.6
6
-2.5
1.4
4
-2.0V
-3.0
1.2
-3.5
-4.0
-4.5
2
-1.5V
0
0
1
2
3
4
5
1
0.8
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0.5
V
GS
= -4.5V
1.4
1.2
R
DS(ON)
,ON-RESISTANCE(OHM)
I
D
= -1.6A
I
D
= -0.8A
R
DS(ON)
, NORMALIZED
0.4
0.3
T
J
= 125°C
1
0.2
0.8
0.1
25°C
0.6
-50
0
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (°C)
-V
GS
,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
-I
S
, REVERSE DRAIN CURRENT (A)
10
10
T
A
= -55°C
25°C
125°C
V
GS
= 0V
1
8
T = 125°C
J
0.1
6
25°C
-55°C
4
0.01
2
0.001
0
0
1
2
3
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS9431A Rev. A2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
