FDS9412
Typical Characteristics
10
I
D
= 8.4A
8
V
DS
= 5V
10V
15V
1500
f = 1MHz
V
GS
= 0 V
1200
C
ISS
6
900
4
600
C
OSS
C
RSS
2
300
0
0
3
6
9
12
15
0
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
1ms
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
0.01
R
θ
JA
= 125 C/W
T
A
= 25 C
0.001
0.1
1
10
100
0
o
o
Figure 8. Capacitance Characteristics.
50
100
µ
s
40
SINGLE PULSE
R
θ
JA
= 125 C/W
T
A
= 25 C
30
o
o
1
0.1
20
10
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 125 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
t
1
, TIME (sec)
1
10
100
1000
0.1
0.001
0.0001
0.001
0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9412 Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
