FDS8958A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
V
GS
= 0 V, I
D
= -250
µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= -250 µA, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
All
All
30
-30
25
-22
1
-1
100
-100
V
mV/°C
µA
nA
nA
Off Characteristics
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
DS
= V
GS
, I
D
= -250 µA
I
D
= 250
µA,
Referenced to 25°C
I
D
= -250 µA, Referenced to 25°C
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= -10 V, I
D
= -5 A
V
GS
= -10 V, I
D
= -5 A, T
J
= 125°C
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 7 A
V
DS
= -5 V, I
D
=-5 A
Q1
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
1
-1
1.6
-1.7
-4.3
4
21
32
27
41
58
58
3
-3
V
mV/°C
28
42
40
52
78
80
mΩ
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
-20
19
11
789
690
173
306
66
77
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Q2
Reverse Transfer Capacitance V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
pF
pF
pF
FDS8958A Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
