May 2007
FDS8984
tm
N-Channel PowerTrench® MOSFET
30V, 7A, 23mΩ
General Description
Features
Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
Low gate charge
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
100% RG tested
RoHS Compliant
D2
D
D2
D
5
6
7
8
4
3
2
1
D1
D
D1
D
Q2
Q1
G2
SO-8
S2
G
G1
S
S1
S
SO-8
Pin 1
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
30
V
V
±20
(Note 1a)
(Note 2)
7
30
A
ID
A
EAS
PD
Single Pulse Avalache Energy
32
mJ
W
Power Dissipation for Single Operation
Derate above 25°C
1.6
13
mW/°C
°C
TJ, TSTG
Operating and Storage Temperature
-55 to 150
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDS8984
FDS8984
SO-8
330mm
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8984 Rev. A1
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
