FDS8880 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.2
1.0
I
D
, DRAIN CURRENT (A)
0.8
12
10
V
GS
= 10V
8
6
4
2
R
θJA
=50
o
C/W
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V
POWER DISSIPATION MULTIPLIER
0.6
0.4
0.2
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
SINGLE PULSE
R
θ
JA
= 125 C/W
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
0.0005
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125 C/W
o
100
T
A
= 25 C
o
10
1
0.5
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 4. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDS8880 Rev. B
4
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
