TA = 25°C unless otherwise noted
DMOS Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
µ
A
BVDSS
Drain-Source Breakdown Voltage
-20
V
VGS = 0 V, ID = -250
µ
°
°
DSS
BV
∆
Breakdown Voltage Temperature
Coefficient
-25
ID = -250 A, Referenced to 25 C
mV/ C
TJ
µ
A
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
(Note 2)
On Characteristics
µ
DS = VGS, ID = -250 A
VGS(th)
Gate Threshold Voltage
-0.4
-25
-0.6
4
-1
V
V
∆
µ
°
°
Gate Threshold Voltage
Temperature Coefficient
GS(th)
V
ID = -250 A, Referenced to 25 C
mV/ C
∆
TJ
Ω
Ω
Ω
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -5 A
VGS = -4.5 V, ID = -5 A, TJ=125 C
0.036 0.047
0.050 0.085
0.047 0.070
°
VGS = -2.5 V, ID = -4.3 A
ID(on)
gFS
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
A
S
Forward Transconductance
VDS = -5 V, ID = -5 A
16
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = -10 V, VGS = 0 V,
1130
480
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
120
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6
8
16
37
ns
ns
Ω
23
260
90
360
125
28
ns
ns
Qg
Qgs
Qgd
VDS = -5 V, ID = -5 A,
GS = -5 V,
20
nC
nC
nC
V
2.8
3.2
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-2.1
-1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
-0.8
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
c) 125°C/W on a minimum
mountingpad of 2 oz. copper.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105°C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS8433A Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
