FDS7096N3
January 2004
FDS7096N3
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Features
•
14 A, 30 V
R
DS(ON)
= 9 mΩ @ V
GS
= 10 V
R
DS(ON)
= 12 mΩ @ V
GS
= 4.5 V
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
•
Fast switching
•
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Applications
•
•
•
DC/DC converter
Power management
Load switch
5
6
7
8
Bottom-side
Drain Contact
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
°C
14
60
3.0
1.5
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
40
0.5
°C/W
Package Marking and Ordering Information
Device Marking
FDS7096N3
2004
Fairchild Semiconductor Corporation
Device
FDS7096N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS7096N3 Rev E2 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
