FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.1
I
DSS
, REVERSE LEAKAGE CURRENT (A)
0.01
T
A
= 125° C
0.001
T
A
= 100° C
0.0001
0.4A/Div
0.00001
T
A
= 25°C
0.000001
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
12.5nS/Div
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
Figure 12. FDS6990AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
0.4A/Div
12.5nS/Div
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
6
FDS6990AS Rev. A
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