FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
March 2005
FDS6990AS
Dual 30V N
-
Channel PowerTrench
®
SyncFET™
Features
■
7.5 A, 30 V. R
DS(ON)
= 22 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 28 m
Ω
@ V
GS
= 4.5 V
■
Includes SyncFET Schottky diode
■
Low gate charge (10nC typical)
■
High performance trench technology for extremely low
R
DS(ON)
■
High power and current handling capability
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low R
DS(ON)
and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
Applications
■
DC/DC converter
■
Motor drives
D1
D2
D2
D1
5
Q1
4
3
2
Q2
6
SO-8
Pin 1
S2
G2
S1
G1
7
8
1
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
θ
JA
R
θ
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
±
20
7.5
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°
C
°
C/W
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
FDS6990AS
Device
FDS6990AS
FDS6990AS_NL (Note 4)
Reel Size
13"
13"
Tape width
12mm
12mm
Quantity
2500 units
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6990AS Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
