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FDS6990AS_08 参数 Datasheet PDF下载

FDS6990AS_08图片预览
型号: FDS6990AS_08
PDF下载: 下载PDF文件 查看货源
内容描述: 双30V N沟道的PowerTrench SyncFET [Dual 30V N-Channel PowerTrench SyncFET]
分类和应用:
文件页数/大小: 8 页 / 896 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 7.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 15 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
20
29
1
1.7
–3
17
26
21
22
35
28
30
31
500
±
100
3
V
mV/
°
C
µ
A
nA
Parameter
Test Conditions
Min
Typ
Max
Units
On Characteristics
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
mV/
°
C
m
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
A
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
550
330
60
3.1
pF
pF
pF
16
10
38
88
18
16
24
10
14
8
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Switching Characteristics
(Note 2)
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs = 10V
Total Gate Charge at Vgs = 5V
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V, I
D
= 10 A, V
GS
= 5 V
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
8
5
24
4
9
8
14
5
10
6
1.5
2.0
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 2.3 A
I
F
= 10A,
d
iF
/d
t
= 300 A/µs
(Note 3)
(Note 2)
0.6
18
11
2.9
0.7
A
V
nS
nC
2
FDS6990AS Rev. A1
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