FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
Typical Characteristics
10
I
D
=7.5A
1500
f = 1MHz
V
GS
= 0V
V
DS
= 10V
20V
6
15V
4
1200
V
GS
, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
900
C
iss
600
C
oss
2
300
C
rss
0
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
100µs
50
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
10
100s
1
DC
0.1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25 C
0.01
0.1
1
10
o
1ms
10ms
1s
10s
30
20
10
0
100
0.001
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
0.2
R
θ
JA
= 135
°C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.1
0.1
0.05
0.02
0.01
0.01
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
FDS6990AS Rev. A1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
