June 1999
FDS6990A
Dual N-Channel Logic Level PowerTrench
General Description
ΤΜ
MOSFET
7.5 A, 30 V. R
DS(ON)
= 0.018
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.023
Ω
@
V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (typical 18nC).
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
Features
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D1
D1
D2
D2
5
6
7
8
4
3
2
1
S
FD 0A
9
69
G1
S2
G2
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
= 25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Ratings
30
±20
7.5
20
(Note 1a)
(Note 1b)
(Note 1c)
Units
V
V
A
P
D
Power Dissipation for Single Operation
2
1.6
0.9
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
©1999 Fairchild Semiconductor
FDS6990A Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
